PSMN2R8-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN2R8-80BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 847 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET PSMN2R8-80BS

PSMN2R8-80BS Datasheet (PDF)

..1. Size:226K nxp
psmn2r8-80bs.pdf

PSMN2R8-80BSN-channel 80 V, 3 m standard level FET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

..2. Size:255K inchange semiconductor
psmn2r8-80bs.pdf

isc N-Channel MOSFET Transistor PSMN2R8-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:222K philips
psmn2r8-40ps.pdf

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFETRev. 01 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

6.2. Size:745K nxp
psmn2r8-40ps.pdf

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFET11 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduct

6.3. Size:365K nxp
psmn2r8-25mlc.pdf

PSMN2R8-25MLCN-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

6.4. Size:301K nxp
psmn2r8-40ysd.pdf

PSMN2R8-40YSDN-channel 40 V, 2.8 m, 160 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology26 August 2019 Product data sheet1. General description160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

6.5. Size:216K nxp
psmn2r8-40bs.pdf

PSMN2R8-40BSN-channel 40 V 2.9 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

6.6. Size:261K inchange semiconductor
psmn2r8-40ps.pdf

isc N-Channel MOSFET Transistor PSMN2R8-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.7. Size:254K inchange semiconductor
psmn2r8-40bs.pdf

isc N-Channel MOSFET Transistor PSMN2R8-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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