Справочник MOSFET. PSMN2R8-80BS

 

PSMN2R8-80BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN2R8-80BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 135 nC
   trⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 847 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN2R8-80BS

 

 

PSMN2R8-80BS Datasheet (PDF)

 ..1. Size:226K  nxp
psmn2r8-80bs.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-80BSN-channel 80 V, 3 m standard level FET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 ..2. Size:255K  inchange semiconductor
psmn2r8-80bs.pdf

PSMN2R8-80BS
PSMN2R8-80BS

isc N-Channel MOSFET Transistor PSMN2R8-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:222K  philips
psmn2r8-40ps.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFETRev. 01 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 6.2. Size:745K  nxp
psmn2r8-40ps.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-40PSN-channel TO220 40 V 2.8 m standard level MOSFET11 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduct

 6.3. Size:365K  nxp
psmn2r8-25mlc.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-25MLCN-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 6.4. Size:301K  nxp
psmn2r8-40ysd.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-40YSDN-channel 40 V, 2.8 m, 160 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology26 August 2019 Product data sheet1. General description160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 6.5. Size:216K  nxp
psmn2r8-40bs.pdf

PSMN2R8-80BS
PSMN2R8-80BS

PSMN2R8-40BSN-channel 40 V 2.9 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 6.6. Size:261K  inchange semiconductor
psmn2r8-40ps.pdf

PSMN2R8-80BS
PSMN2R8-80BS

isc N-Channel MOSFET Transistor PSMN2R8-40PSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.7. Size:254K  inchange semiconductor
psmn2r8-40bs.pdf

PSMN2R8-80BS
PSMN2R8-80BS

isc N-Channel MOSFET Transistor PSMN2R8-40BSFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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