PSMN3R0-30YLD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN3R0-30YLD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 91 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 1029 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Paquete / Cubierta: LFPAK56
Búsqueda de reemplazo de PSMN3R0-30YLD MOSFET
PSMN3R0-30YLD Datasheet (PDF)
psmn3r0-30yld.pdf

PSMN3R0-30YLDN-channel 30 V, 3.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology18 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
psmn3r0-30yl.pdf

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn3r0-30yl.pdf

PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn3r0-30mlc.pdf

PSMN3R0-30MLCN-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment1.2 Features and bene
Otros transistores... PSMN2R5-60PL , PSMN2R6-60PS , PSMN2R7-30BL , PSMN2R8-25MLC , PSMN2R8-40BS , PSMN2R8-80BS , PSMN2R9-30MLC , PSMN3R0-30MLC , IRFP064N , PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , PSMN3R4-30BL , PSMN3R4-30BLE , PSMN3R8-100BS .
History: IRFP3703 | SI6469DQ | C2M120W080 | SI2303BDS | FDD4243-F085 | IRHLF87Y20 | LNE10R040W3
History: IRFP3703 | SI6469DQ | C2M120W080 | SI2303BDS | FDD4243-F085 | IRHLF87Y20 | LNE10R040W3



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