PSMN3R0-30YLD - описание и поиск аналогов

PSMN3R0-30YLD N-channel 30 V, 3.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET

PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

PSMN3R0-30MLC N-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and bene