PSMN3R0-30YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R0-30YLD
Маркировка: 3D030L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 91 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 31 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 1029 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0031 Ohm
Тип корпуса: LFPAK56
Аналог (замена) для PSMN3R0-30YLD
PSMN3R0-30YLD Datasheet (PDF)
psmn3r0-30yld.pdf
PSMN3R0-30YLDN-channel 30 V, 3.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology18 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
psmn3r0-30yl.pdf
PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn3r0-30yl.pdf
PSMN3R0-30YLN-channel 30 V 3 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
psmn3r0-30mlc.pdf
PSMN3R0-30MLCN-channel 30 V 3.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment1.2 Features and bene
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