PSMN3R4-30BL Todos los transistores

 

PSMN3R4-30BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN3R4-30BL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 822 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

PSMN3R4-30BL Datasheet (PDF)

 ..1. Size:210K  nxp
psmn3r4-30bl.pdf pdf_icon

PSMN3R4-30BL

PSMN3R4-30BLN-channel 30 V 3.3 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 ..2. Size:254K  inchange semiconductor
psmn3r4-30bl.pdf pdf_icon

PSMN3R4-30BL

isc N-Channel MOSFET Transistor PSMN3R4-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 0.1. Size:221K  nxp
psmn3r4-30ble.pdf pdf_icon

PSMN3R4-30BL

PSMN3R4-30BLEN-channel 30 V 3.4 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

 0.2. Size:255K  inchange semiconductor
psmn3r4-30ble.pdf pdf_icon

PSMN3R4-30BL

isc N-Channel MOSFET Transistor PSMN3R4-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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History: TPCP8007-H | S80N08R | BF982 | AP2312GN | AOB190A60L | VBP1104N | CS5NJ9540

 

 
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