PSMN3R4-30BL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN3R4-30BL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 822 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de PSMN3R4-30BL MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN3R4-30BL datasheet
psmn3r4-30bl.pdf
PSMN3R4-30BL N-channel 30 V 3.3 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn3r4-30bl.pdf
isc N-Channel MOSFET Transistor PSMN3R4-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn3r4-30ble.pdf
PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe
psmn3r4-30ble.pdf
isc N-Channel MOSFET Transistor PSMN3R4-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
Otros transistores... PSMN2R9-30MLC , PSMN3R0-30MLC , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , 20N60 , PSMN3R4-30BLE , PSMN3R8-100BS , PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
2sc3320 | 2sc2078 | ac127 transistor | a42 transistor | bc547c | 2sa726 | 2sd313 | 2sc536
