PSMN3R4-30BL
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R4-30BL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 114
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.15
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 100
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 64
nC
trⓘ -
Время нарастания: 73
ns
Cossⓘ - Выходная емкость: 822
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033
Ohm
Тип корпуса:
D2PAK
Аналог (замена) для PSMN3R4-30BL
PSMN3R4-30BL
Datasheet (PDF)
..1. Size:210K nxp
psmn3r4-30bl.pdf 
PSMN3R4-30BLN-channel 30 V 3.3 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
..2. Size:254K inchange semiconductor
psmn3r4-30bl.pdf 
isc N-Channel MOSFET Transistor PSMN3R4-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
0.1. Size:221K nxp
psmn3r4-30ble.pdf 
PSMN3R4-30BLEN-channel 30 V 3.4 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe
0.2. Size:255K inchange semiconductor
psmn3r4-30ble.pdf 
isc N-Channel MOSFET Transistor PSMN3R4-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
4.1. Size:219K philips
psmn3r4-30pl.pdf 
PSMN3R4-30PLN-channel 30 V 3.4 m logic level MOSFETRev. 01 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low s
4.2. Size:814K nxp
psmn3r4-30pl.pdf 
PSMN3R4-30PLN-channel 30 V 3.4 m logic level MOSFETRev. 01 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low s
4.3. Size:261K inchange semiconductor
psmn3r4-30pl.pdf 
isc N-Channel MOSFET Transistor PSMN3R4-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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