PSMN3R9-25MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN3R9-25MLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23.2 nS
Cossⓘ - Capacitancia de salida: 376 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00415 Ohm
Paquete / Cubierta: LFPAK33
Búsqueda de reemplazo de PSMN3R9-25MLC MOSFET
PSMN3R9-25MLC Datasheet (PDF)
psmn3r9-25mlc.pdf

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PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due
Otros transistores... PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , PSMN3R4-30BL , PSMN3R4-30BLE , PSMN3R8-100BS , 50N06 , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS .
History: MTP5N35 | SSP90R1K5S | IXFC36N50P | SIS888DN | AP09N90W | AP09N70P-H | APT1201R4BLL
History: MTP5N35 | SSP90R1K5S | IXFC36N50P | SIS888DN | AP09N90W | AP09N70P-H | APT1201R4BLL



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