Справочник MOSFET. PSMN3R9-25MLC

 

PSMN3R9-25MLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN3R9-25MLC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 21.5 nC
   trⓘ - Время нарастания: 23.2 ns
   Cossⓘ - Выходная емкость: 376 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00415 Ohm
   Тип корпуса: LFPAK33

 Аналог (замена) для PSMN3R9-25MLC

 

 

PSMN3R9-25MLC Datasheet (PDF)

 ..1. Size:365K  nxp
psmn3r9-25mlc.pdf

PSMN3R9-25MLC PSMN3R9-25MLC

PSMN3R9-25MLCN-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 6.1. Size:249K  nxp
psmn3r9-60ps.pdf

PSMN3R9-25MLC PSMN3R9-25MLC

PSMN3R9-60PSN-channel 60 V, 3.9 m standard level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 6.2. Size:294K  nxp
psmn3r9-100ysf.pdf

PSMN3R9-25MLC PSMN3R9-25MLC

PSMN3R9-100YSFNextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56package17 February 2020 Preliminary data sheet1. General descriptionNextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended forindustrial and consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

 6.3. Size:232K  nxp
psmn3r9-60xs.pdf

PSMN3R9-25MLC PSMN3R9-25MLC

PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due

 6.4. Size:261K  inchange semiconductor
psmn3r9-60ps.pdf

PSMN3R9-25MLC PSMN3R9-25MLC

isc N-Channel MOSFET Transistor PSMN3R9-60PSFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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