PSMN4R3-30BL Todos los transistores

 

PSMN4R3-30BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN4R3-30BL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 103 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.15 V

Carga de compuerta (Qg): 19 nC

Tiempo de elevación (tr): 58 nS

Conductancia de drenaje-sustrato (Cd): 500 pF

Resistencia drenaje-fuente RDS(on): 0.0041 Ohm

Empaquetado / Estuche: D2PAK

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PSMN4R3-30BL Datasheet (PDF)

1.1. psmn4r3-30bl.pdf Size:206K _update_mosfet

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-30BL N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due

1.2. psmn4r3-30pl.pdf Size:215K _philips2

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-30PL N-channel 30 V 4.3 m? logic level MOSFET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching S

 2.1. psmn4r3-100ps.pdf Size:193K _update_mosfet

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-100PS N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High

2.2. psmn4r3-100es.pdf Size:186K _update_mosfet

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-100ES N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High ef

 2.3. psmn4r3-80bs.pdf Size:371K _update_mosfet

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-80BS N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High effi

2.4. psmn4r3-80ps.pdf Size:238K _philips2

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-80PS N-channel 80 V, 4.3 m? standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to l

 2.5. psmn4r3-80es.pdf Size:231K _philips2

PSMN4R3-30BL
PSMN4R3-30BL

PSMN4R3-80ES N-channel 80 V, 4.3 m? standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to l

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