PSMN4R3-30BL. Аналоги и основные параметры
Наименование производителя: PSMN4R3-30BL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 103 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 500 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN4R3-30BL
- подборⓘ MOSFET транзистора по параметрам
PSMN4R3-30BL даташит
psmn4r3-30bl.pdf
PSMN4R3-30BL N-channel 30 V 4.1 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn4r3-30pl.pdf
PSMN4R3-30PL N-channel 30 V 4.3 m logic level MOSFET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit
psmn4r3-30pl.pdf
PSMN4R3-30PL N-channel 30 V 4.3 m logic level MOSFET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit
psmn4r3-80ps.pdf
PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
Другие MOSFET... PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , AO3400 , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE .
History: IPD033N06N | BUK963R3-60E | APT10090BLL
History: IPD033N06N | BUK963R3-60E | APT10090BLL
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