PSMN4R3-30BL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN4R3-30BL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 103 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN4R3-30BL
PSMN4R3-30BL Datasheet (PDF)
psmn4r3-30bl.pdf

PSMN4R3-30BLN-channel 30 V 4.1 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn4r3-30pl.pdf

PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn4r3-30pl.pdf

PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
psmn4r3-80ps.pdf

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
Другие MOSFET... PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , IRF3710 , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE .
History: SI5468DC | SSF5508A | SI5475DDC | IRFB3307ZPBF | RU304B | MDU2653 | IRFR13N20D
History: SI5468DC | SSF5508A | SI5475DDC | IRFB3307ZPBF | RU304B | MDU2653 | IRFR13N20D



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