PSMN4R4-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R4-80BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 306 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 112 nC
Tiempo de subida (tr): 38.1 nS
Conductancia de drenaje-sustrato (Cd): 700 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET PSMN4R4-80BS
PSMN4R4-80BS Datasheet (PDF)
psmn4r4-80bs.pdf
PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn4r4-80ps.pdf
PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-80ps.pdf
PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-30mlc.pdf
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