PSMN4R4-80BS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN4R4-80BS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 38.1 ns
Cossⓘ - Выходная емкость: 700 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN4R4-80BS
PSMN4R4-80BS Datasheet (PDF)
psmn4r4-80bs.pdf
PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn4r4-80ps.pdf
PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-80ps.pdf
PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-30mlc.pdf
PSMN4R4-30MLCN-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben
Другие MOSFET... PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , 10N60 , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , PSMN5R6-100BS .
History: WMN36N60C4 | 2SK2147-01R | IAUC120N04S6N010 | IAUC100N04S6N028 | JSM7409B | IRLU4343
History: WMN36N60C4 | 2SK2147-01R | IAUC120N04S6N010 | IAUC100N04S6N028 | JSM7409B | IRLU4343
Список транзисторов
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