Справочник MOSFET. PSMN4R4-80BS

 

PSMN4R4-80BS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN4R4-80BS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 38.1 ns
   Cossⓘ - Выходная емкость: 700 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для PSMN4R4-80BS

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN4R4-80BS Datasheet (PDF)

 ..1. Size:216K  nxp
psmn4r4-80bs.pdfpdf_icon

PSMN4R4-80BS

PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 4.1. Size:205K  philips
psmn4r4-80ps.pdfpdf_icon

PSMN4R4-80BS

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 4.2. Size:708K  nxp
psmn4r4-80ps.pdfpdf_icon

PSMN4R4-80BS

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 6.1. Size:364K  nxp
psmn4r4-30mlc.pdfpdf_icon

PSMN4R4-80BS

PSMN4R4-30MLCN-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

Другие MOSFET... PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , IRFB4227 , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , PSMN5R6-100BS .

History: SIS334DN | TMD2N60H | TK8A50D | IPD70R1K4CE | RU20P4C6 | SIZ346DT | KIA2910N-263

 

 
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