Справочник MOSFET. PSMN4R4-80BS

 

PSMN4R4-80BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN4R4-80BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 112 nC
   trⓘ - Время нарастания: 38.1 ns
   Cossⓘ - Выходная емкость: 700 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN4R4-80BS

 

 

PSMN4R4-80BS Datasheet (PDF)

 ..1. Size:216K  nxp
 psmn4r4-80bs.pdf

PSMN4R4-80BS PSMN4R4-80BS

PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 4.1. Size:205K  philips
 psmn4r4-80ps.pdf

PSMN4R4-80BS PSMN4R4-80BS

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 4.2. Size:708K  nxp
 psmn4r4-80ps.pdf

PSMN4R4-80BS PSMN4R4-80BS

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 6.1. Size:364K  nxp
 psmn4r4-30mlc.pdf

PSMN4R4-80BS PSMN4R4-80BS

PSMN4R4-30MLCN-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

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