PSMN7R6-60XS Todos los transistores

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PSMN7R6-60XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN7R6-60XS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 46 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 51.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 38.7 nC

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 342 pF

Resistencia drenaje-fuente RDS(on): 0.0078 Ohm

Empaquetado / Estuche: TO-220F

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PSMN7R6-60XS Datasheet (PDF)

1.1. psmn7r6-60bs.pdf Size:223K _update_mosfet

PSMN7R6-60XS
PSMN7R6-60XS

PSMN7R6-60BS N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficie

1.2. psmn7r6-60xs.pdf Size:256K _update_mosfet

PSMN7R6-60XS
PSMN7R6-60XS

PSMN7R6-60XS N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits • High efficiency

 1.3. psmn7r6-60ps.pdf Size:213K _philips2

PSMN7R6-60XS
PSMN7R6-60XS

PSMN7R6-60PS N-channel 60 V 7.8 m? standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

Otros transistores... PSMN6R3-120PS , PSMN6R5-80BS , PSMN7R0-100BS , PSMN7R0-30MLC , PSMN7R5-30MLD , PSMN7R5-30YLD , PSMN7R6-100BSE , PSMN7R6-60BS , IRFP4332 , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , PSMN8R5-100ES , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES .

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