Справочник MOSFET. PSMN7R6-60XS

 

PSMN7R6-60XS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN7R6-60XS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38.7 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 342 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для PSMN7R6-60XS

 

 

PSMN7R6-60XS Datasheet (PDF)

 ..1. Size:256K  nxp
 psmn7r6-60xs.pdf

PSMN7R6-60XS PSMN7R6-60XS

PSMN7R6-60XSN-channel 60 V 7.8 m standard level MOSFET in TO220F(SOT186A)16 December 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and power supply equipment.2. Features and benefits High efficiency

 4.1. Size:213K  philips
 psmn7r6-60ps.pdf

PSMN7R6-60XS PSMN7R6-60XS

PSMN7R6-60PSN-channel 60 V 7.8 m standard level MOSFETRev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 4.2. Size:223K  nxp
 psmn7r6-60bs.pdf

PSMN7R6-60XS PSMN7R6-60XS

PSMN7R6-60BSN-channel 60 V 7.8 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 4.3. Size:262K  inchange semiconductor
 psmn7r6-60ps.pdf

PSMN7R6-60XS PSMN7R6-60XS

isc N-Channel MOSFET Transistor PSMN7R6-60PSFEATURESDrain Current : I = 65A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

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