PSMN7R6-60XS datasheet, аналоги, основные параметры

Наименование производителя: PSMN7R6-60XS  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 51.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 342 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для PSMN7R6-60XS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN7R6-60XS даташит

 ..1. Size:256K  nxp
 psmn7r6-60xs.pdf pdf_icon

PSMN7R6-60XS

PSMN7R6-60XS N-channel 60 V 7.8 m standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency

 4.1. Size:213K  philips
 psmn7r6-60ps.pdf pdf_icon

PSMN7R6-60XS

PSMN7R6-60PS N-channel 60 V 7.8 m standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:223K  nxp
 psmn7r6-60bs.pdf pdf_icon

PSMN7R6-60XS

PSMN7R6-60BS N-channel 60 V 7.8 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 4.3. Size:262K  inchange semiconductor
 psmn7r6-60ps.pdf pdf_icon

PSMN7R6-60XS

isc N-Channel MOSFET Transistor PSMN7R6-60PS FEATURES Drain Current I = 65A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

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