PSMN8R5-100ES Todos los transistores

 

PSMN8R5-100ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN8R5-100ES

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 263 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 111 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 380 pF

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: I2PAK

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PSMN8R5-100ES Datasheet (PDF)

1.1. psmn8r5-108es.pdf Size:231K _update_mosfet

PSMN8R5-100ES
PSMN8R5-100ES

PSMN8R5-108ES N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

1.2. psmn8r5-100xs.pdf Size:228K _update_mosfet

PSMN8R5-100ES
PSMN8R5-100ES

PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Hi

 1.3. psmn8r5-100ps.pdf Size:250K _update_mosfet

PSMN8R5-100ES
PSMN8R5-100ES

PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

1.4. psmn8r5-100es.pdf Size:220K _update_mosfet

PSMN8R5-100ES
PSMN8R5-100ES

PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due t

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