PSMN8R5-100ES MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN8R5-100ES
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 263 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: I2PAK
Búsqueda de reemplazo de PSMN8R5-100ES MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN8R5-100ES datasheet
psmn8r5-100es.pdf
PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t
psmn8r5-100esf.pdf
PSMN8R5-100ESF NextPower 100 V, 8.8 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
psmn8r5-100xs.pdf
PSMN8R5-100XS N-channel 100V 8.5 m standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Hi
psmn8r5-100psf.pdf
PSMN8R5-100PSF NextPower 100 V, 8.7 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency
Otros transistores... PSMN7R5-30YLD , PSMN7R6-100BSE , PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , AON7410 , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , PSMN9R8-30MLC , PSMNR90-30BL .
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