Справочник MOSFET. PSMN8R5-100ES

 

PSMN8R5-100ES Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN8R5-100ES
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 263 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: I2PAK
 

 Аналог (замена) для PSMN8R5-100ES

   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN8R5-100ES Datasheet (PDF)

 ..1. Size:220K  nxp
psmn8r5-100es.pdfpdf_icon

PSMN8R5-100ES

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 0.1. Size:250K  nxp
psmn8r5-100esf.pdfpdf_icon

PSMN8R5-100ES

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 3.1. Size:228K  nxp
psmn8r5-100xs.pdfpdf_icon

PSMN8R5-100ES

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 3.2. Size:258K  nxp
psmn8r5-100psf.pdfpdf_icon

PSMN8R5-100ES

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

Другие MOSFET... PSMN7R5-30YLD , PSMN7R6-100BSE , PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , RFP50N06 , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , PSMN9R8-30MLC , PSMNR90-30BL .

History: XGP6510B | RJK0304DPB | PV6D2DA | NCE0125AK | HM4438 | NCEP60T15G

 

 
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