PSMN9R0-25MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN9R0-25MLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10.1 nS
   Cossⓘ - Capacitancia de salida: 206 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00865 Ohm
   Paquete / Cubierta: LFPAK33

Búsqueda de reemplazo de MOSFET PSMN9R0-25MLC

PSMN9R0-25MLC Datasheet (PDF)

..1. Size:365K nxp
psmn9r0-25mlc.pdf

PSMN9R0-25MLCN-channel 25 V 8.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

6.1. Size:397K philips
psmn9r0-30ll.pdf

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

6.2. Size:384K philips
psmn9r0-30yl.pdf

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

8.1. Size:220K philips
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

8.2. Size:737K nxp
psmn9r5-100ps.pdf

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T022017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and con

8.3. Size:226K nxp
psmn9r5-100bs.pdf

PSMN9R5-100BSN-channel 100 V 9.6 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

8.4. Size:919K nxp
psmn9r1-30yl.pdf

PSMN9R1-30YLN-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAKRev. 2 16 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and b

8.5. Size:902K nxp
psmn9r5-30ylc.pdf

PSMN9R5-30YLCN-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 1 September 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

8.6. Size:365K nxp
psmn9r8-30mlc.pdf

PSMN9R8-30MLCN-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: