PSMN9R5-100BS Todos los transistores

 

PSMN9R5-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN9R5-100BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 211 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 89 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 67 nC

Tiempo de elevación (tr): 25.2 nS

Conductancia de drenaje-sustrato (Cd): 302 pF

Resistencia drenaje-fuente RDS(on): 0.0096 Ohm

Empaquetado / Estuche: D2PAK

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PSMN9R5-100BS Datasheet (PDF)

1.1. psmn9r5-100bs.pdf Size:226K _update_mosfet

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficien

1.2. psmn9r5-100ps.pdf Size:220K _philips2

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R5-100PS N-channel 100 V 9.6 m? standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du

 4.1. psmn9r0-25mlc.pdf Size:365K _update_mosfet

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R0-25MLC N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

4.2. psmn9r8-30mlc.pdf Size:365K _update_mosfet

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R8-30MLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 4.3. psmn9r0-30ll.pdf Size:397K _philips2

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R0-30LL N-channel QFN3333 30 V 9 m? logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low s

4.4. psmn9r0-30yl.pdf Size:384K _philips2

PSMN9R5-100BS
PSMN9R5-100BS

PSMN9R0-30YL N-channel 30 V 8 m? logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ? Hig

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