PSMN9R5-100BS MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN9R5-100BS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 211 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 89 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 25.2 nS
Drain-Source Capacitance (Cd): 302 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0096 Ohm
Package: D2PAK
PSMN9R5-100BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN9R5-100BS Datasheet (PDF)
1.1. psmn9r5-100bs.pdf 
Size:226K _update_mosfet
PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
1.2. psmn9r5-100ps.pdf Size:220K _philips2
PSMN9R5-100PS N-channel 100 V 9.6 m? standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du
4.1. psmn9r0-25mlc.pdf Size:365K _update_mosfet
PSMN9R0-25MLC N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben
4.2. psmn9r8-30mlc.pdf Size:365K _update_mosfet
PSMN9R8-30MLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene
4.3. psmn9r0-30ll.pdf Size:397K _philips2
PSMN9R0-30LL N-channel QFN3333 30 V 9 m? logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low s
4.4. psmn9r0-30yl.pdf Size:384K _philips2
PSMN9R0-30YL N-channel 30 V 8 m? logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ? Hig
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