XP161 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

XP161 Datasheet (PDF)

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SMD Type MOSFETN-Channel Power MOSFETXP161SOT-89 Unit: mm Features4.50+0.1 1.50+0.1-0.1 -0.1 Low on-state resistance : Rds (on) = 0.055 ( Vgs = 4.5V )1.80+0.1-0.1 Rds (on) = 0.095 ( Vgs = 2.5V ) Rds (on) = 0.20 ( Vgs = 1.5V ) Ultra high-speed switching2 310.48+0.1 0.53+0.1 -0.1 Gate protect diode built-in -0.1 -0.1 0.44+0.1 Driving Volta

0.1. Size:284K torex
xp161a1265pr-g.pdf pdf_icon

XP161A1265PR-G ETR1123_003Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

0.2. Size:312K torex
xp161a11a1pr-g.pdf pdf_icon

XP161A11A1PR-G ETR1122_003Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

0.3. Size:309K torex
xp161a1355pr-g.pdf pdf_icon

XP161A1355PR-G ETR1124_003Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens