XP161
MOSFET. Datasheet pdf. Equivalent
Type Designator: XP161
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT-89
XP161
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
XP161
Datasheet (PDF)
..1. Size:54K kexin
xp161.pdf 
SMD Type MOSFETN-Channel Power MOSFETXP161SOT-89 Unit: mm Features4.50+0.1 1.50+0.1-0.1 -0.1 Low on-state resistance : Rds (on) = 0.055 ( Vgs = 4.5V )1.80+0.1-0.1 Rds (on) = 0.095 ( Vgs = 2.5V ) Rds (on) = 0.20 ( Vgs = 1.5V ) Ultra high-speed switching2 310.48+0.1 0.53+0.1 -0.1 Gate protect diode built-in -0.1 -0.1 0.44+0.1 Driving Volta
0.1. Size:284K torex
xp161a1265pr-g.pdf
XP161A1265PR-G ETR1123_003Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
0.2. Size:312K torex
xp161a11a1pr-g.pdf
XP161A11A1PR-G ETR1122_003Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
0.3. Size:309K torex
xp161a1355pr-g.pdf
XP161A1355PR-G ETR1124_003Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens
0.4. Size:891K cn vbsemi
xp161a11a1pr.pdf
XP161A11A1PRwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw
0.5. Size:841K cn vbsemi
xp161a1355pr.pdf
XP161A1355PRwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw
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