XP161 Specs and Replacement
Type Designator: XP161
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT-89
XP161 substitution
- MOSFET ⓘ Cross-Reference Search
XP161 datasheet
xp161.pdf
SMD Type MOSFET N-Channel Power MOSFET XP161 SOT-89 Unit mm Features 4.50+0.1 1.50+0.1 -0.1 -0.1 Low on-state resistance Rds (on) = 0.055 ( Vgs = 4.5V ) 1.80+0.1 -0.1 Rds (on) = 0.095 ( Vgs = 2.5V ) Rds (on) = 0.20 ( Vgs = 1.5V ) Ultra high-speed switching 2 3 1 0.48+0.1 0.53+0.1 -0.1 Gate protect diode built-in -0.1 -0.1 0.44+0.1 Driving Volta... See More ⇒
xp161a1265pr-g.pdf
XP161A1265PR-G ETR1123_003 Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit... See More ⇒
xp161a11a1pr-g.pdf
XP161A11A1PR-G ETR1122_003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit... See More ⇒
xp161a1355pr-g.pdf
XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens... See More ⇒
Detailed specifications: PSMN9R5-100BS, PSMN9R8-30MLC, PSMNR90-30BL, XP151A11B0MR-G, XP151A12A2MR-G, XP151A13A0MR-G, XP152A11E5MR-G, XP152A12C0MR-G, BS170, XP161A11A1PR-G, XP161A1265PR-G, XP161A1355PR-G, XP162A11C0PR-G, XP162A12A6PR-G, XP202A0003MR-G, XP202A0003PR-G, YTF830
Keywords - XP161 MOSFET specs
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History: HM15N02Q
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