XP161A1265PR-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP161A1265PR-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOT-89
Búsqueda de reemplazo de XP161A1265PR-G MOSFET
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XP161A1265PR-G datasheet
xp161a1265pr-g.pdf
XP161A1265PR-G ETR1123_003 Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
xp161a11a1pr-g.pdf
XP161A11A1PR-G ETR1122_003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit
xp161a1355pr-g.pdf
XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens
xp161a11a1pr.pdf
XP161A11A1PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw
Otros transistores... PSMNR90-30BL , XP151A11B0MR-G , XP151A12A2MR-G , XP151A13A0MR-G , XP152A11E5MR-G , XP152A12C0MR-G , XP161 , XP161A11A1PR-G , IRFP250 , XP161A1355PR-G , XP162A11C0PR-G , XP162A12A6PR-G , XP202A0003MR-G , XP202A0003PR-G , YTF830 , 2SK1029 , 2SK1197 .
History: APT5014SFLLG | S2N7002K | NCE60R360F | SGM3055 | RTR025N05FRA | IRF7326D2PBF
History: APT5014SFLLG | S2N7002K | NCE60R360F | SGM3055 | RTR025N05FRA | IRF7326D2PBF
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