Справочник MOSFET. XP161A1265PR-G

 

XP161A1265PR-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: XP161A1265PR-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT-89
     - подбор MOSFET транзистора по параметрам

 

XP161A1265PR-G Datasheet (PDF)

 ..1. Size:284K  torex
xp161a1265pr-g.pdfpdf_icon

XP161A1265PR-G

XP161A1265PR-G ETR1123_003Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

 7.1. Size:312K  torex
xp161a11a1pr-g.pdfpdf_icon

XP161A1265PR-G

XP161A11A1PR-G ETR1122_003Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

 7.2. Size:309K  torex
xp161a1355pr-g.pdfpdf_icon

XP161A1265PR-G

XP161A1355PR-G ETR1124_003Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens

 7.3. Size:891K  cn vbsemi
xp161a11a1pr.pdfpdf_icon

XP161A1265PR-G

XP161A11A1PRwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

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History: IXFX73N30Q | WMM13N65EM | 2SK3572-Z | CEU01N7 | FMW60N190S2HF | STL11N4LLF5 | PSMN4R2-60PL

 

 
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