XP162A12A6PR-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP162A12A6PR-G
Código: 212*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 2.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 0.5 V
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.17 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de MOSFET XP162A12A6PR-G
XP162A12A6PR-G Datasheet (PDF)
xp162a12a6pr-g.pdf
XP162A12A6PR-G ETR1126_003Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density
xp162a11.pdf
SMD Type MOSFETP-Channel MOSFETXP162A11SOT-89Unit:mm1.70 0.1 Features VDS (V) =-30V ID =-2.5 A (VGS =-10V) RDS(ON) 150m (VGS =-10V) RDS(ON) 280m (VGS =-4.5V)0.42 0.10.46 0.11.Gate2.Drain3.SourceG D S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 2
xp162a11c0pr-g.pdf
XP162A11C0PR-G ETR1125_003Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density
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