XP162A12A6PR-G - параметры транзистора MOSFET, его аналоги, datasheet

XP162A12A6PR-G Datasheet (PDF)

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XP162A12A6PR-G ETR1126_003Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density

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SMD Type MOSFETP-Channel MOSFETXP162A11SOT-89Unit:mm1.70 0.1 Features VDS (V) =-30V ID =-2.5 A (VGS =-10V) RDS(ON) 150m (VGS =-10V) RDS(ON) 280m (VGS =-4.5V)0.42 0.10.46 0.11.Gate2.Drain3.SourceG D S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 2

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XP162A11C0PR-G ETR1125_003Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density

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