XP162A12A6PR-G - аналоги, параметры транзистора

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XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density

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SMD Type MOSFET P-Channel MOSFET XP162A11 SOT-89 Unit mm 1.70 0.1 Features VDS (V) =-30V ID =-2.5 A (VGS =-10V) RDS(ON) 150m (VGS =-10V) RDS(ON) 280m (VGS =-4.5V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source G D S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 2

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XP162A11C0PR-G ETR1125_003 Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density

Другие MOSFET... XP151A13A0MR-G , XP152A11E5MR-G , XP152A12C0MR-G , XP161 , XP161A11A1PR-G , XP161A1265PR-G , XP161A1355PR-G , XP162A11C0PR-G , 10N65 , XP202A0003MR-G , XP202A0003PR-G , YTF830 , 2SK1029 , 2SK1197 , 2SK1297 , MMN400A006U1 , MMN400A010U1 .