MMN400A006U1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMN400A006U1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1000 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 610 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 210 nS
Cossⓘ - Capacitancia de salida: 5000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00075 Ohm
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMN400A006U1 MOSFET
MMN400A006U1 Datasheet (PDF)
mmn400a006u1.pdf

MMN400A006U160V 400A N-ch Power MOSFET ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=0.35m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency
mmn400a010u1.pdf

MMN400A010U1100V 400A N-ch Power MOSFET ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency
mmn404.pdf

MMN404Preliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 7mRDS(ON), Vgs@4.5V, Ids@20A = 8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentD-PAK Internal Schematic DiagramDrain Gate Source
Otros transistores... XP162A11C0PR-G , XP162A12A6PR-G , XP202A0003MR-G , XP202A0003PR-G , YTF830 , 2SK1029 , 2SK1197 , 2SK1297 , CS150N03A8 , MMN400A010U1 , MMN600DB012B , MMN600DB015B , MMN668A010U1 , FTP03N06NA , ITP09N50A , HX2301 , HX2301A .
History: SIR826ADP | 2SK763 | AP6N021M | SM1108NSF | CS34P10 | CEU6086 | AP03N70P-H
History: SIR826ADP | 2SK763 | AP6N021M | SM1108NSF | CS34P10 | CEU6086 | AP03N70P-H



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