HX3400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HX3400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT23

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HX3400 Datasheet (PDF)

..1. Size:155K hx
hx3400.pdf

SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 30 V VGS Gate-Source voltage 12 VID Drain current 5.8 A PD Power Dissipation 1.4 W

0.1. Size:183K hx
hx3400a.pdf

SOT-23-3 Plastic-Encapsulate TransistorsHX3400AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:A09TMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts

9.1. Size:72K hx
hx3401.pdf

SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18VMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage 12 V ID Drain current -4.2 A PD Power Dissipation 1.2

9.2. Size:183K hx
hx3401a.pdf

SOT-23-3Plastic-Encapsulate TransistorsHX3401A MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A19TMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHA

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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