HX3401 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HX3401 datasheet

..1. Size:72K hx
hx3401.pdf pdf_icon

SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING X18V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage 12 V ID Drain current -4.2 A PD Power Dissipation 1.2

0.1. Size:183K hx
hx3401a.pdf pdf_icon

SOT-23-3Plastic-Encapsulate Transistors HX3401A MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A19T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -3 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHA

9.1. Size:155K hx
hx3400.pdf pdf_icon

SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING XORB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage 12 V ID Drain current 5.8 A PD Power Dissipation 1.4 W

9.2. Size:183K hx
hx3400a.pdf pdf_icon

SOT-23-3 Plastic-Encapsulate Transistors HX3400AMOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING A09T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 V ID Drain current 3.6 A PD Power Dissipation 1 W Tj Junction Temperature 150 Ts

Otros transistores... ITP09N50A , HX2301 , HX2301A , HX2302 , HX2302A , HX2305 , HX3400 , HX3400A , IRFZ46N , HX3401A , HX3415 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , HD2312 .