MMBF170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s

MMBF170N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Swi

N-Channel Enhancement Mode MOSFET Features SOT-23 Surface-mounted package Advanced trench cell design Extremely low threshold voltage ESD protected ( HBM > 2KV ) Quick reference BV 60 V Ptot 0.83 W ID 0.5 A Top View RDS(ON) 3 @ VGS = 10 V 1 :Gate(G) 2 :Source(S) 3 :Drain(D) RDS(ON) 4 @ VGS = 4.5 V Limiting Val

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti

MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp://onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre

MMBF170L, NVBF170LPower MOSFET500 mA, 60 V, N-Channel SOT-23Features NVBF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101http://onsemi.comQualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant500 mA, 60 VRDS(on) = 5 WMAXIMUM RATINGSRating Symbol Value UnitSOT-23Drain-Source Voltage

MMBF170LN-Channel Enhancement Mode Field Effect TransistorFeatures Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance ESD protected up to 2KV Marking Code:6Z1.G 2.S 3.DSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Cu

MMBF170LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG