MMBF170
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMBF170
Marking Code: 6Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
SOT23
MMBF170
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMBF170
Datasheet (PDF)
..1. Size:1298K fairchild semi
bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf 
March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s
..2. Size:126K diodes
mmbf170.pdf
MMBF170N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Swi
..4. Size:378K cn shikues
mmbf170.pdf
N-Channel Enhancement Mode MOSFET Features SOT-23 Surface-mounted package Advanced trench cell design Extremely low threshold voltage ESD protected ( HBM > 2KV ) Quick reference BV 60 V Ptot 0.83 W ID 0.5 A Top View RDS(ON) 3 @ VGS = 10 V 1 :Gate(G) 2 :Source(S) 3 :Drain(D) RDS(ON) 4 @ VGS = 4.5 V Limiting Val
0.1. Size:102K motorola
mmbf170lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti
0.2. Size:98K motorola
mmbf170lt1rev2d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF170LT1/DTMOS FET TransistorDRAIN3MMBF170LT1NChannel1GATE32SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage VDGS 60 VdcGateSource Voltage Continuous VGS 20 Vdc Nonrepeti
0.3. Size:77K onsemi
mmbf170lt1-d.pdf
MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp://onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre
0.4. Size:98K onsemi
mmbf170l nvbf170l.pdf
MMBF170L, NVBF170LPower MOSFET500 mA, 60 V, N-Channel SOT-23Features NVBF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101http://onsemi.comQualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant500 mA, 60 VRDS(on) = 5 WMAXIMUM RATINGSRating Symbol Value UnitSOT-23Drain-Source Voltage
0.5. Size:933K slkor
mmbf170l.pdf
MMBF170LN-Channel Enhancement Mode Field Effect TransistorFeatures Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance ESD protected up to 2KV Marking Code:6Z1.G 2.S 3.DSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Cu
0.6. Size:1611K cn vbsemi
mmbf170lt1g.pdf
MMBF170LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
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