HD2307 Todos los transistores

 ..1. Size:2450K  high diode
 hd2307.pdf

HD2307 SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct Summary P ID V(BR)DSS RDS(on)MAX SOT- 23 88m @-10V D -30V -2.7A 138m @-4.5V S Features TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Load Switch for Portable Devices DC/DC Converter Marking S7 Symbol Value Unit Paramet

 0.1. Size:37K  sensitron
 shd230704.pdf

SENSITRON SHD230704 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4965, REV. - HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES 100 Volt, 0.18 Ohm, 5A MOSFET Fast Switching Low RDS (on) Characterized at VGS of 6V MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20

 9.1. Size:60K  sensitron
 shd230209.pdf

SENSITRON SHD230209 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 318, REV. A HERMETIC POWER MOSFET P-CHANNEL QUAD FEATURES -100 Volt, 0.60 Ohm, -3.5A MOSFET Fast Switching Low RDS (on) Equivalent to IRF9120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID -

 9.2. Size:60K  sensitron
 shd230202.pdf

SENSITRON SHD230202 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS (on) Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 6

 9.3. Size:59K  sensitron
 shd230303.pdf

SENSITRON SHD230303 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 9.0 Amps CONTINUOUS

 9.4. Size:61K  sensitron
 shd230409.pdf

SENSITRON SHD230409 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 721, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES -100 Volt, 0.22 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive Requirements MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - -14 Amps CON

 9.5. Size:60K  sensitron
 shd230302.pdf

SENSITRON SHD230302 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 602, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES 100 Volt, 0.18 Ohm, 7.4A MOSFET Fast Switching Low RDS (on) Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 10.8 Amps O

 9.6. Size:60K  sensitron
 shd230452.pdf

SENSITRON SHD230452 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS (on) Electrically Equivalent to IRF5210 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID -

 9.7. Size:61K  sensitron
 shd230405.pdf

SHD230405 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 579, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES 500 Volt, 0.85, Ohm, 5.5Amp MOSFET Isolated and Hermetically Sealed Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 5.5 Amps

 9.8. Size:2293K  high diode
 hd2305.pdf

HD2305 SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct Summary P ID V(BR)DSS RDS(on)MAX SOT- 23 45m @-4.5V D -12V 60m @-2.5V -4.1A 90m @-1.8V S Features TrenchFET Power MOSFET G Applications Load Switch for Portable Devices DC/DC Converter Marking S5 Symbol Value Parameter Unit Drain-Source Voltage VDS -12 V Gate-

 9.9. Size:2253K  high diode
 hd2302.pdf

HD2302 SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct Summary P ID SOT- 23 V(BR)DSS RDS(on)MAX 60m @4.5V D 20V 2.1A 115m @2.5V S Features TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Extreme fast switches Marking S2 Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Gate-S