HD2307 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HD2307
Маркировка: S7
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4.1 nC
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 67 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.088 Ohm
Тип корпуса: SOT23
HD2307 Datasheet (PDF)
hd2307.pdf
HD2307SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 2388m@-10VD-30V-2.7A138m@-4.5VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Load Switch for Portable Devices DC/DC Converter Marking: S7Symbol Value Unit Paramet
shd230704.pdf
SENSITRON SHD230704 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4965, REV. - HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: 100 Volt, 0.18 Ohm, 5A MOSFET Fast Switching Low RDS (on) Characterized at VGS of 6V MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20
shd230209.pdf
SENSITRON SHD230209SEMICONDUCTORTECHNICAL DATADATA SHEET 318, REV. AHERMETIC POWER MOSFETP-CHANNEL QUADFEATURES: -100 Volt, 0.60 Ohm, -3.5A MOSFET Fast Switching Low RDS (on) Equivalent to IRF9120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -
shd230202.pdf
SENSITRON SHD230202SEMICONDUCTORTECHNICAL DATADATA SHEET 319, REV. AHERMETIC POWER MOSFETN-CHANNEL QUADFEATURES: 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS (on) Equivalent to IRF120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 6
shd230303.pdf
SENSITRON SHD230303SEMICONDUCTORTECHNICAL DATADATA SHEET 698, REV. -DUAL HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRF230MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS
shd230409.pdf
SENSITRON SHD230409SEMICONDUCTORTECHNICAL DATADATA SHEET 721, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.22 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive RequirementsMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - -14 AmpsCON
shd230302.pdf
SENSITRON SHD230302 SEMICONDUCTORTECHNICAL DATADATA SHEET 602, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.18 Ohm, 7.4A MOSFET Fast Switching Low RDS (on) Equivalent to IRFE130MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 10.8 AmpsO
shd230452.pdf
SENSITRON SHD230452SEMICONDUCTORTECHNICAL DATADATA SHEET 722, REV. -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS (on) Electrically Equivalent to IRF5210MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -
shd230405.pdf
SHD230405SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 579, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 0.85, Ohm, 5.5Amp MOSFET Isolated and Hermetically Sealed Surface Mount PackageMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 5.5 Amps
hd2305.pdf
HD2305SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 2345m@-4.5VD-12V 60m@-2.5V-4.1A90m@-1.8VSFeatures TrenchFET Power MOSFET GApplications Load Switch for Portable Devices DC/DC Converter Marking S5Symbol Value Parameter UnitDrain-Source Voltage VDS -12 V Gate-
hd2302.pdf
HD2302SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID SOT- 23V(BR)DSS RDS(on)MAX 60m@4.5VD20V2.1A115m@2.5VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Extreme fast switchesMarking: S2 Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Gate-S
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918