MTB30P06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

MTB30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

Spec. No. : C796J3 Issued Date : 2012.06.19 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB30P06J3 ID -24ARDS(ON)@VGS=-10V, ID=-20A 28m(typ)RDS(ON)@VGS=-4.5V, ID=-20A 33m(typ)Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou

Spec. No. : C699V8 Issued Date : 2012.03.20 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06V8 ID 6.8AVGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline

Spec. No. : C699J3 Issued Date : 2012.05.16 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTB30N06J3 ID 22ARDS(ON)@VGS=10V, ID=18A 27m(typ) RDS(ON)@VGS=4.5V, ID=10A 31m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli

Spec. No. : C699Q8 Issued Date : 2013.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06Q8 ID 8A25m VGS=10V, ID=6.8A RDSON(TYP) 28m VGS=4.5V, ID=4A Description The MTB30N06Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi

Spec. No. : C580L3 Issued Date : 2014.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTB300N10L3ID@VGS=10V, TA=25C 1.9A ID@VGS=10V, TC=25C 5.0A RDSON@VGS=10V, ID=2.9A 290m(typ) RDSON@VGS=5V, ID=2.9A 302m(typ) Features Single Drive Requirement Fast Switching Characteristic Pb-free