MTB30P06V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTB30P06V
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 54 nC
Выходная емкость (Cd): 1562 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: D2PAK
MTB30P06V Datasheet (PDF)
mtb30p06v.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou
mtb30p06v mtb30p06vt4 mtb30p06vt4g.pdf
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MTB30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)
mtb30p06vrev1x.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou
mtb30p06j3.pdf
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Spec. No. : C796J3 Issued Date : 2012.06.19 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB30P06J3 ID -24ARDS(ON)@VGS=-10V, ID=-20A 28m(typ)RDS(ON)@VGS=-4.5V, ID=-20A 33m(typ)Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag
mtb30n06vlrev4.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou
mtb30n06vl.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30N06VL/DDesigner's Data SheetMTB30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.050 OHMarea product abou
mtb30n06v8.pdf
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Spec. No. : C699V8 Issued Date : 2012.03.20 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06V8 ID 6.8AVGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline
mtb30n06j3.pdf
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Spec. No. : C699J3 Issued Date : 2012.05.16 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTB30N06J3 ID 22ARDS(ON)@VGS=10V, ID=18A 27m(typ) RDS(ON)@VGS=4.5V, ID=10A 31m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli
mtb30n06q8.pdf
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Spec. No. : C699Q8 Issued Date : 2013.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB30N06Q8 ID 8A25m VGS=10V, ID=6.8A RDSON(TYP) 28m VGS=4.5V, ID=4A Description The MTB30N06Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi
mtb300n10l3.pdf
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Spec. No. : C580L3 Issued Date : 2014.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTB300N10L3ID@VGS=10V, TA=25C 1.9A ID@VGS=10V, TC=25C 5.0A RDSON@VGS=10V, ID=2.9A 290m(typ) RDSON@VGS=5V, ID=2.9A 302m(typ) Features Single Drive Requirement Fast Switching Characteristic Pb-free
Другие MOSFET... MEM610 , MEM614 , MMBF170 , MNT-LB32N16 , MNT-LB32N16-C4 , MNT-LB32N20 , MNT-LB32N20-C4 , MTB30N06VL , IRFZ46N , MTB35N06ZL , MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 .