MTB30P06V - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

Spec. No. C796J3 Issued Date 2012.06.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB30P06J3 ID -24A RDS(ON)@VGS=-10V, ID=-20A 28m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 33m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou

Spec. No. C699V8 Issued Date 2012.03.20 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06V8 ID 6.8A VGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline

Spec. No. C699J3 Issued Date 2012.05.16 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB30N06J3 ID 22A RDS(ON)@VGS=10V, ID=18A 27m (typ) RDS(ON)@VGS=4.5V, ID=10A 31m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli

Spec. No. C699Q8 Issued Date 2013.04.15 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06Q8 ID 8A 25m VGS=10V, ID=6.8A RDSON(TYP) 28m VGS=4.5V, ID=4A Description The MTB30N06Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi

Spec. No. C580L3 Issued Date 2014.12.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTB300N10L3 ID@VGS=10V, TA=25 C 1.9A ID@VGS=10V, TC=25 C 5.0A RDSON@VGS=10V, ID=2.9A 290m (typ) RDSON@VGS=5V, ID=2.9A 302m (typ) Features Single Drive Requirement Fast Switching Characteristic Pb-free