SVF2N60N Todos los transistores

 

SVF2N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SVF2N60N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23.4 nS
   Cossⓘ - Capacitancia de salida: 35.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
   Paquete / Cubierta: TO126

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SVF2N60N Datasheet (PDF)

 ..1. Size:600K  silan
svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf

SVF2N60N
SVF2N60N

SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

 ..2. Size:519K  silan
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf

SVF2N60N
SVF2N60N

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

 0.1. Size:692K  silan
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf

SVF2N60N
SVF2N60N

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 0.2. Size:362K  silan
svf2n60nf svf2n60f.pdf

SVF2N60N
SVF2N60N

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

 7.1. Size:614K  silan
svf2n60rd svf2n60rm svf2n60rmj.pdf

SVF2N60N
SVF2N60N

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133

 7.2. Size:682K  silan
svf2n60m-f-t-d.pdf

SVF2N60N
SVF2N60N

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

 7.3. Size:360K  silan
svf2n60cn svf2n60cm svf2n60cf.pdf

SVF2N60N
SVF2N60N

SVF2N60CN/M/F 2A600V N 2SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 31. 2. 3

 7.4. Size:434K  silan
svf2n60cn svf2n60cnf svf2n60cm svf2n60cmj svf2n60cf svf2n60cd.pdf

SVF2N60N
SVF2N60N

SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13

 7.5. Size:401K  silan
svf2n60rdtr svf2n60rm svf2n60rmj.pdf

SVF2N60N
SVF2N60N

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3

 7.6. Size:624K  silan
svf2n60m svf2n60f svf2n60t svf2n60d.pdf

SVF2N60N
SVF2N60N

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

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