All MOSFET. SVF2N60N Datasheet

 

SVF2N60N Datasheet and Replacement


   Type Designator: SVF2N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 35.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO126
 

 SVF2N60N substitution

   - MOSFET ⓘ Cross-Reference Search

 

SVF2N60N Datasheet (PDF)

 ..1. Size:600K  silan
svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60N

SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

 ..2. Size:519K  silan
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60N

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

 0.1. Size:692K  silan
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N60N

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 0.2. Size:362K  silan
svf2n60nf svf2n60f.pdf pdf_icon

SVF2N60N

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

Datasheet: SVF23N50PN , SVF2N60CN , SVF2N60CNF , SVF2N60CM , SVF2N60CMJ , SVF2N60CF , SVF2N60CD , SVF2N60MJ , IRF1407 , SVF2N60NF , SVF2N60RD , SVF2N60RM , SVF2N60RMJ , SVF2N65N , SVF2N65MJ , SVF2N65D , SVF2N70M .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - SVF2N60N MOSFET datasheet

 SVF2N60N cross reference
 SVF2N60N equivalent finder
 SVF2N60N lookup
 SVF2N60N substitution
 SVF2N60N replacement

 

 
Back to Top

 


 
.