TSM1N45DCS Todos los transistores

 

TSM1N45DCS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM1N45DCS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.25 Ohm
   Paquete / Cubierta: SOP-8
 

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TSM1N45DCS Datasheet (PDF)

 ..1. Size:124K  taiwansemi
 tsm1n45dcs.pdf pdf_icon

TSM1N45DCS

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

 7.1. Size:463K  taiwansemi
 tsm1n45ct tsm1n45cw.pdf pdf_icon

TSM1N45DCS

TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

 9.1. Size:124K  taiwansemi
 tsm1nb60sct.pdf pdf_icon

TSM1N45DCS

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

 9.2. Size:289K  taiwansemi
 tsm1n80cw tsm1n80sct.pdf pdf_icon

TSM1N45DCS

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

MOSTRAR MÁS

Otros transistores... SVF2N65MJ , SVF2N65D , SVF2N70M , SVF2N70MJ , SVF2N70F , SVF2N70D , SVF2N70NF , TSM1N45CW , 2N60 , TSM1N50CT , TSM1N60LCH , TSM1N60LCP , TSM1N60SCT , TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP .

History: HGP105N15M | NTMFS4823NT1G | CEP840G | MIC94050YM4TR | SI4825DY | RQK0605JGDQA | KI1400DL

 

 
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