All MOSFET. TSM1N45DCS Datasheet

 

TSM1N45DCS Datasheet and Replacement


   Type Designator: TSM1N45DCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
   Package: SOP-8
 

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TSM1N45DCS Datasheet (PDF)

 ..1. Size:124K  taiwansemi
 tsm1n45dcs.pdf pdf_icon

TSM1N45DCS

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

 7.1. Size:463K  taiwansemi
 tsm1n45ct tsm1n45cw.pdf pdf_icon

TSM1N45DCS

TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

 9.1. Size:124K  taiwansemi
 tsm1nb60sct.pdf pdf_icon

TSM1N45DCS

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

 9.2. Size:289K  taiwansemi
 tsm1n80cw tsm1n80sct.pdf pdf_icon

TSM1N45DCS

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

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Datasheet: SVF2N65MJ , SVF2N65D , SVF2N70M , SVF2N70MJ , SVF2N70F , SVF2N70D , SVF2N70NF , TSM1N45CW , 2N60 , TSM1N50CT , TSM1N60LCH , TSM1N60LCP , TSM1N60SCT , TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP .

History: PE532DY | OSG60R1K8PF

Keywords - TSM1N45DCS MOSFET datasheet

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