2SK1006-01MR Todos los transistores

 ..1. Size:211K  1
 2sk1006-01mr.pdf

FUJI POWER MOSFET 2SK1006-01MR N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220F15 Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators 2.54 UPS DC-DC converters 3. Source General purpose power amplifier JEDEC SC-67 EIAJ Equivalent circuit schematic Max

 3.1. Size:127K  fuji
 2sk1006-01m.pdf

 7.1. Size:73K  fuji
 2sk1006.pdf

 8.1. Size:245K  1
 2sk1007-01.pdf

FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi

 8.2. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 8.3. Size:73K  fuji
 2sk1005.pdf

 8.4. Size:73K  fuji
 2sk1004.pdf

 8.5. Size:167K  fuji
 2sk1009-01.pdf

 8.6. Size:133K  fuji
 2sk1008-01.pdf

 8.7. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

 8.8. Size:125K  no
 2sk1001.pdf

 8.9. Size:61K  inchange semiconductor
 2sk1007.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL

 8.10. Size:265K  inchange semiconductor
 2sk1008.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1008 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo

 8.11. Size:200K  inchange semiconductor
 2sk1009.pdf

isc N-Channel MOSFET Transistor 2SK1009 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS