2SK1006-01MR MOSFET Datasheet: N-Ch, 450V, 5A. Full specification with pinout and replacement list

2SK1006-01MR Specs and Replacement

Type Designator: 2SK1006-01MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO220F15

2SK1006-01MR substitution

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2SK1006-01MR datasheet

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FUJI POWER MOSFET 2SK1006-01MR N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220F15 Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators 2.54 UPS DC-DC converters 3. Source General purpose power amplifier JEDEC SC-67 EIAJ Equivalent circuit schematic Max... See More ⇒

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FUJI POWER MOSFET 2SK1007-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maxi... See More ⇒