TSM3404CX MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSM3404CX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.41 nS

Cossⓘ - Capacitancia de salida: 100.47 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT-23

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TSM3404CX datasheet

 ..1. Size:338K  taiwansemi
 tsm3404cx.pdf pdf_icon

TSM3404CX

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac

 8.1. Size:242K  taiwansemi
 tsm3400cx.pdf pdf_icon

TSM3404CX

TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 28 @ VGS = 10V 5.8 3. Drain 30 33 @ VGS = 4.5V 5.0 52 @ VGS = 2.5V 4.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Infor

 8.2. Size:235K  taiwansemi
 tsm3401cx.pdf pdf_icon

TSM3404CX

TSM3401 30V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 60 @ VGS = 10V -3.0 3. Drain -30 90 @ VGS = 4.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Info

 9.1. Size:203K  taiwansemi
 tsm3424cx6.pdf pdf_icon

TSM3404CX

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

MOSTRAR MÁS

Otros transistores... TSM2N70CZ, TSM2NB60CH, TSM2NB60CI, TSM2NB60CP, TSM2NB60CZ, TSM301K12CQ, TSM3400CX, TSM3401CX, IRFB4115, TSM3424CX6, TSM3433CX6, TSM3441CX6, TSM3442CX6, TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6