TSM3442CX6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSM3442CX6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SOT-26

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TSM3442CX6 datasheet

 ..1. Size:343K  taiwansemi
 tsm3442cx6.pdf pdf_icon

TSM3442CX6

TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi

 8.1. Size:340K  taiwansemi
 tsm3441cx6.pdf pdf_icon

TSM3442CX6

TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch

 8.2. Size:201K  taiwansemi
 tsm3446cx6.pdf pdf_icon

TSM3442CX6

TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m ) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

 8.3. Size:208K  taiwansemi
 tsm3443cx6.pdf pdf_icon

TSM3442CX6

TSM3443 20V P-Channel MOSFET Pin Definition SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m ) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch

MOSTRAR MÁS

Otros transistores... TSM2NB60CZ, TSM301K12CQ, TSM3400CX, TSM3401CX, TSM3404CX, TSM3424CX6, TSM3433CX6, TSM3441CX6, 7N65, TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6, TSM3457CX6, TSM3460CX6, TSM3462CX6, TSM3481CX6