All MOSFET. TSM3442CX6 Datasheet

 

TSM3442CX6 Datasheet and Replacement


   Type Designator: TSM3442CX6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-26
 

 TSM3442CX6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TSM3442CX6 Datasheet (PDF)

 ..1. Size:343K  taiwansemi
 tsm3442cx6.pdf pdf_icon

TSM3442CX6

TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi

 8.1. Size:340K  taiwansemi
 tsm3441cx6.pdf pdf_icon

TSM3442CX6

TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch

 8.2. Size:201K  taiwansemi
 tsm3446cx6.pdf pdf_icon

TSM3442CX6

TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

 8.3. Size:208K  taiwansemi
 tsm3443cx6.pdf pdf_icon

TSM3442CX6

TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch

SHOW MORE

Datasheet: TSM2NB60CZ , TSM301K12CQ , TSM3400CX , TSM3401CX , TSM3404CX , TSM3424CX6 , TSM3433CX6 , TSM3441CX6 , 7N65 , TSM3443CX6 , TSM3446CX6 , TSM3454CX6 , TSM3455CX6 , TSM3457CX6 , TSM3460CX6 , TSM3462CX6 , TSM3481CX6 .

History: VBM1405

Keywords - TSM3442CX6 MOSFET datasheet

 TSM3442CX6 cross reference
 TSM3442CX6 equivalent finder
 TSM3442CX6 lookup
 TSM3442CX6 substitution
 TSM3442CX6 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.