TSM3443CX6 Todos los transistores

 

TSM3443CX6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM3443CX6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4.7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 35 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
   Paquete / Cubierta: SOT-26

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TSM3443CX6 Datasheet (PDF)

 ..1. Size:208K  taiwansemi
tsm3443cx6.pdf

TSM3443CX6 TSM3443CX6

TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch

 7.1. Size:121K  taiwansemi
tsm3443 c07.pdf

TSM3443CX6 TSM3443CX6

 8.1. Size:340K  taiwansemi
tsm3441cx6.pdf

TSM3443CX6 TSM3443CX6

TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch

 8.2. Size:201K  taiwansemi
tsm3446cx6.pdf

TSM3443CX6 TSM3443CX6

TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

 8.3. Size:343K  taiwansemi
tsm3442cx6.pdf

TSM3443CX6 TSM3443CX6

TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi

 8.4. Size:119K  taiwansemi
tsm3441.pdf

TSM3443CX6 TSM3443CX6

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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