TSM3443CX6 MOSFET Datasheet: P-Ch, 20V, 4.7A. Full specification with pinout and replacement list

TSM3443CX6 Specs and Replacement

Type Designator: TSM3443CX6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-26

TSM3443CX6 substitution

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TSM3443CX6 datasheet

..1. Size:208K taiwansemi
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TSM3443 20V P-Channel MOSFET Pin Definition SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m ) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch ... See More ⇒

7.1. Size:121K taiwansemi
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8.1. Size:340K taiwansemi
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TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch ... See More ⇒

8.2. Size:201K taiwansemi
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TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m ) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde... See More ⇒