TSM3446CX6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM3446CX6
   Código: 46*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12.5 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 125 pF
   Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
   Paquete / Cubierta: SOT-26

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TSM3446CX6 Datasheet (PDF)

..1. Size:201K taiwansemi
tsm3446cx6.pdf

TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain VDS (V) RDS(on)(m) ID (A) 2. Drain 5, Drain 3. Gate 4. Source 33 @ VGS = 4.5V 5.3 20 40 @ VGS = 2.5V 4.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orde

8.1. Size:340K taiwansemi
tsm3441cx6.pdf

TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 90 @ VGS = -4.5V -3.3 2. Drain 5, Drain -20 3. Gate 4. Source 110 @ VGS = -2.5V -2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch

8.2. Size:343K taiwansemi
tsm3442cx6.pdf

TSM3442 20V N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 6. Drain 2. Drain 5, Drain 70 @ VGS = 4.5V 4 3. Gate 4. Source 20 90 @ VGS = 2.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderi

8.3. Size:208K taiwansemi
tsm3443cx6.pdf

TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDSON (m) ID (A) 3. Gate 4. Source 60 @ VGS = -4.5V -4.7 20 100 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch

8.4. Size:121K taiwansemi
tsm3443 c07.pdf