TSM3548DCX6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSM3548DCX6

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: SOT-26

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TSM3548DCX6 datasheet

 ..1. Size:64K  taiwansemi
 tsm3548dcx6.pdf pdf_icon

TSM3548DCX6

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa

 9.1. Size:89K  taiwansemi
 tsm35n10cp.pdf pdf_icon

TSM3548DCX6

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package

 9.2. Size:339K  taiwansemi
 tsm35n03cp.pdf pdf_icon

TSM3548DCX6

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order

 9.3. Size:87K  taiwansemi
 tsm35n03pq56.pdf pdf_icon

TSM3548DCX6

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @

MOSTRAR MÁS

Otros transistores... TSM3443CX6, TSM3446CX6, TSM3454CX6, TSM3455CX6, TSM3457CX6, TSM3460CX6, TSM3462CX6, TSM3481CX6, IRF4905, TSM35N03CP, TSM35N03PQ56, TSM35N10CP, TSM3900DCX6, TSM3911DCX6, TSM3N80CH, TSM3N80CI, TSM3N80CP