TSM3548DCX6 PDF and Equivalents Search

 ..1. Size:64K  taiwansemi
 tsm3548dcx6.pdf

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa... See More ⇒

 9.1. Size:89K  taiwansemi
 tsm35n10cp.pdf

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package... See More ⇒

 9.2. Size:339K  taiwansemi
 tsm35n03cp.pdf

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order... See More ⇒

 9.3. Size:87K  taiwansemi
 tsm35n03pq56.pdf

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition 1. Source 8. Drain VDS (V) RDS(on)(m ) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @... See More ⇒