TSM35N03PQ56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM35N03PQ56
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 8.2 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: PDFN56

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TSM35N03PQ56 Datasheet (PDF)

..1. Size:87K taiwansemi
tsm35n03pq56.pdf

TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 7 @ VGS =10V 12 3. Source 6. Drain 30 4. Gate 5. Drain 9 @ VGS =4.5V 10 Features Block Diagram Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @

6.1. Size:339K taiwansemi
tsm35n03cp.pdf

TSM35N03 25V N-Channel MOSFET PRODUCT SUMMARY TO-252 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 13 @ VGS = 10V 30 25 8.5 @ VGS = 4.5V 30 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Dc-DC Converters and Motors Drivers Order

8.1. Size:89K taiwansemi
tsm35n10cp.pdf

TSM35N10 100V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 37 @ VGS =10V 32 Features Block Diagram Advanced Trench Technology Low RDS(ON) 37m (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Ordering Information Part No. Package

9.1. Size:64K taiwansemi
tsm3548dcx6.pdf

TSM3548D Complementary Enhancement MOSFET SOT-26 Pin Definition: MOSFET PRODUCT SUMMARY 1. Gate 1 6. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 41 @ VGS = 10V 3.0 N-Channel 30 45 @ VGS = 4.5V 2.2 60 @ VGS = -10V -2.2 P-Channel -30 75 @ VGS = -4.5V -1.7 Block Diagram Features Fast switching speed High performa

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