TSM4435CS Todos los transistores

 

TSM4435CS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM4435CS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 319 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SOP-8

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TSM4435CS Datasheet (PDF)

 ..1. Size:494K  taiwansemi
tsm4435cs.pdf

TSM4435CS
TSM4435CS

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba

 7.1. Size:202K  taiwansemi
tsm4435bcs.pdf

TSM4435CS
TSM4435CS

TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 3. Source 6. Drain 21 @ VGS = -10V -9.1 4. Gate 5. Drain -30 35 @ VGS = -4.5V -6.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conv

 8.1. Size:370K  taiwansemi
tsm4433cs.pdf

TSM4435CS
TSM4435CS

TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 90 @ VGS = -4.5V -3.9 4. Gate -20 110 @ VGS = -2.5V -3.2 5, 6, 7, 8. Drain 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 8.2. Size:489K  taiwansemi
tsm4431cs.pdf

TSM4435CS
TSM4435CS

TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A

 8.3. Size:305K  taiwansemi
tsm4433dcs.pdf

TSM4435CS
TSM4435CS

TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 90 @ VGS = -4.5V -3.9 4. Gate 2 5. Drain 2 -20 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Lo

 8.4. Size:234K  taiwansemi
tsm4436cs.pdf

TSM4435CS
TSM4435CS

TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 36 @ VGS = 10V 4.6 4. Gate 5. Drain 60 43 @ VGS = 4.5V 4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC

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